1 MRF18085B MRF18085Br3 motorola rf device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for gsm and edge base station applications with frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma, and multicarrier amplifier applications. ? gsm and edge performance, full frequency band (1930 ? 1990 mhz) power gain ? 12.5 db (typ) @ 85 watts cw efficiency ? 50% (typ) @ 85 watts cw ? internally matched, controlled q, for ease of use ? high gain, high efficiency, and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 26 vdc, @ p1db output power, @ f = 1930 mhz ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs +15, ?0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 273 1.56 watts w/ c storage temperature range t stg ?65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.64 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF18085B/d semiconductor technical data gsm/gsm edge 1.9 ? 1.99 ghz, 85 w, 26 v lateral n?channel rf power mosfets case 465?06, style 1 (ni?780) ? motorola, inc. 2002 rev 0
MRF18085B MRF18085Br3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 600 madc) v gs(q) 2.5 3.9 4.5 vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.18 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 6.0 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1 mhz) c rss ? 3.6 ? pf functional tests (in motorola test fixture) common ? source amplifier power gain @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) g ps 11.5 12.5 ? db drain efficiency @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) 46 50 ? % input return loss @ 85 w (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) irl 9 12 ? db p1 db output power (v dd = 26 vdc, i dq = 800 ma, f = 1930 ? 1990 mhz) p1db 80 90 ? watts output mismatch stress @ p1db (v dd = 26 vdc, i dq = 600 ma, f = 1930 mhz, vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output.
3 MRF18085B MRF18085Br3 motorola rf device data c1, c10 1.0 nf chip capacitors, b case, atc c2 10 f, 35 v tantalum capacitor c3, c6 10 pf chip capacitors, b case, atc c4 3.3 pf chip capacitor, b case, atc c5 1.0 pf chip capacitor, b case, atc c7, c8 100 nf chip capacitors, accu ? p (1206) c9 3.9 pf chip capacitor, b case, atc c11 470 f, 63 v electrolytic capacitor r1, r2 1.0 k chip resistors (0805) r3 2 x 18 k chip resistor (1206) z1 1.654 x 0.082 microstrip z2 0.207 x 0.082 microstrip z3 0.362 x 1.260 microstrip z4 0.583 x 0.669 microstrip z5 0.449 x 0.179 microstrip z6 0.877 x 0.082 microstrip z7 0.326 x 0.082 microstrip pcb 0.030 glass teflon ? ( r = 2.55) figure 1. 1.93 ? 1.99 ghz test fixture schematic figure 2. 1.93 ? 1.99 ghz test fixture component layout MRF18085B rev 0
MRF18085B MRF18085Br3 4 motorola rf device data ??? ??? ??? ? t2 z4 figure 3. 1.93 ? 1.99 ghz gsm edge optimized demo board schematic figure 4. 1.93 ? 1.99 ghz gsm edge optimized demo board component layout b1 short rf ferrite bead, #27 430119447 c1, c2 1 f chip capacitors, accu ? p (0805) c3, c4 1 nf chip capacitors, accu ? p (0805) c5 10 pf chip capacitor, accu ? p (0805) c7 1.5 pf chip capacitor, accu ? p (0805) c8 8.2 pf chip capacitor, accu ? p (0805) c9 1.0 pf chip capacitor, accu ? p (0805) c10 100 f, 63 v electrolytic capacitor c11, c12 10 nf chip capacitors (0805) c13 10 f, 35 v tantalum capacitor c14 8.2 pf chip capacitor, accu ? p (0805) r1 10 ? chip resistor (0805) r2 1 k ? chip resistor (0805) r3 1.2 k ? chip resistor (0805) r4 2.2 k ? chip resistor (0805) r5 5 k ? chip resistor (0805) r6, r7 9 ? chip resistors (1206) (18 ? x 18 ? ) t1 voltage regulator, micro ? 8, motorola #lp2951 t2 npn bipolar transistor, sot ? 23, motorola #bc847 z1 ? z9 printed transmission lines substrate 0.5 mm rogers 4350 r = 3.53) d c11 c4 c5 c8 c7 c9 c13 c14 c3 c2 r5 t2 r4 r3 r2 c1 r1 t1 r6 c10 + mrf18085 b1 c12
5 MRF18085B MRF18085Br3 motorola rf device data typical characteristics (performed on a gsm edge optimized demo board) figure 5. power gain versus output power figure 6. error vector magnitude versus frequency figure 7. power gain versus output power figure 8. evm and gain versus output power figure 9. power gain and irl versus frequency figure 10. power gain and efficiency versus output power
MRF18085B MRF18085Br3 6 motorola rf device data figure 11. edge spectrum at 40 watts (avg.) output power
7 MRF18085B MRF18085Br3 motorola rf device data figure 12. series equivalent input and output impedance f mhz z in ? z ol * ? 1805 1880 1.43 + j3.74 1.5 + j4.13 1.27 + j3.95 2 + j3.60 1.98 + j3.57 2.13 + j3.16 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ? 1930 1990 1.86 + j4.76 2.17 + j3.36
MRF18085B MRF18085Br3 8 motorola rf device data package dimensions case 465 ? 06 issue f (ni ? 780)
d g k c e h s f q 2x b b (flange)
aa (flange) t n (lid) m (insulator) (insulator) r (lid) motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ? typical ? parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including ? typicals ? must be validated for each customer application by customer ? s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & trademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1 ? 303 ? 675 ? 2140 or 1 ? 800 ? 441 ? 2447 japan : motorola japan ltd.; sps, technical information center, 3 ? 20 ? 1, minami ? azabu. minato ? ku, tokyo 106 ? 8573 japan. 81 ? 3 ? 3440 ? 3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong ko ng. 852 ? 26668334 technical information center: 1 ? 800 ? 521 ? 6274 home page : http://www.motorola.com/semiconductors/ MRF18085B/d ?
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